Reconstructions of the InP„111...A surface
نویسندگان
چکیده
Indium phosphide was deposited on InP(111)A substrates by metalorganic vapor-phase epitaxy. Then, the surface was characterized by scanning tunneling microscopy, low-energy electron diffraction, and x-ray photoelectron spectroscopy. Two reconstructions were observed: the (232) and the ()3))R30° with phosphorus coverages of 0.25 and 1.0060.05 ML ~monolayers!, respectively. The (232) was found to adopt an indium-vacancy structure such as that observed on the (232) phase of GaAs (111)A . The ()3))R30° reconstruction has not been seen previously on III/V semiconductor surfaces. The experimental evidence suggests that this surface is terminated with a complete layer of phosphorus trimers.
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